K4S560832C-TP1H

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S560832C-TP1H
Brand SAMSUNG
Item SDRAM
Part No 32MX8 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 100 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x8
Density 256M
Internal Banks 4 Banks
Power Low Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4S560832C-TP1H 10,000 2009+ Get Quote
K4S560832C-TP1H 10,000 Get Quote
K4S560832C-TP1H 3,929 Get Quote
K4S560832C-TP1H 12,000 Get Quote
K4S560832C-TP1H 6,988 2003+ Get Quote
K4S560832C-TP1H 20,000 2003+ Get Quote
K4S560832C-TP1H 6,640 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S560832A-1H000 TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
K4S560832B-TI1H000 TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
K4S560832C-TI1H TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
K4S560832C-TI1H000 TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C