K4S561632HUI75M

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S561632HUI75M
Brand SAMSUNG
Item SDRAM
Part No 16MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4S561632HUI75M 6,500 Get Quote
K4S561632HUI75M 441 DC0613 Get Quote
K4S561632HUI75M 441 613 Get Quote
K4S561632HUI75M 496 DC0613 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EDS2516ADTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA-75TI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA7ATI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS42S16160C-75TLI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS42S16160D-75ETLI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160C-75TLA1 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160C-75TLA1-TR TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160D-75ETLA1 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160D-75ETLA1-TR TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C