K4S561632HUI75M

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S561632HUI75M
Brand SAMSUNG
Item SDRAM
Part No 16MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4S561632HUI75M 6,500 Get Quote
K4S561632HUI75M 441 DC0613 Get Quote
K4S561632HUI75M 441 613 Get Quote
K4S561632HUI75M 496 DC0613 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S561632E-TI75TOO TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-TP75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-UI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-UI75000 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-UI75T TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-UI75T00 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632E-UP75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632ETI-75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632ETI-75000 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S561632ETI75T TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C