K4S563233F-HN75

Product Overview

IC Picture

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Manufacturer Part No K4S563233F-HN75
Brand SAMSUNG
Item SDRAM
Part No 8MX32 SD
Alternate Names K4S563233F-HN75000
K4S563233F-HN750JR
K4S563233F-HN75T00
K4S563233FHN7500

Product Details

Package FBGA
Outpack
RoHS RoHS
Voltage 3.3 V
Temperature -40 C~+125 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x32
Density 256M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 7th Generation

Available Offers

Description Qty Datecode
K4S563233FHN7500 5,542 Get Quote
K4S563233F-HN75 4,000 Get Quote
K4S563233F-HN75 1,000 2019+ Get Quote
K4S563233F-HN75 5,000 21+ Get Quote
K4S563233F-HN75000 200 DC05 Get Quote
K4S563233F-HN75000 200 5 Get Quote
K4S563233F-HN75 2,588 Get Quote
K4S563233F-HN75 12,500 Get Quote
K4S563233F-HN75 167 Get Quote
K4S563233F-HN75 7,500 7 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S563232F-HN75 FBGA 3.3 V 133 MHZ -40 C~+125 C
K4S563233F-HN75 PB FREE FBGA 3.3 V 133 MHZ -40 C~+125 C
K4S56323FHN75 FBGA 3.3 V 133 MHZ -40 C~+125 C
K4S56323LF-HN75 FBGA 3.3 V 133 MHZ -40 C~+125 C