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Manufacturer Part No | K4T1G164QE-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 64MX16 DDR2 |
Alternate Names | K4T1G164QE-HCE60 |
K4T1G164QE-HCE6000 | |
K4T1G164QE-HCE60JR | |
K4T1G164QE-HCE6: | |
K4T1G164QE-HCE6T | |
K4T1G164QE-HCE6T00 | |
K4T1G164QE-HCE6T000 |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T1G164QE-HCE6 | 12,800 | Get Quote | |
K4T1G164QE-HCE6 | 922 | Get Quote | |
K4T1G164QE-HCE6 | 44 | 1007+ | Get Quote |
K4T1G164QE-HCE6 | 5,000 | 21+ | Get Quote |
K4T1G164QE-HCE6 | 20,000 | 09+ | Get Quote |
K4T1G164QE-HCE6 | 4 | DC09 | Get Quote |
K4T1G164QE-HCE6 | 4 | 9 | Get Quote |
K4T1G164QE-HCE6 | 1,280 | 10+ | Get Quote |
K4T1G164QE-HCE6 | 294 | 2011 | Get Quote |
K4T1G164QE-HCE6 | 12,500 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT47H64M16HR-3GD9JWQ | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3HTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3I | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3L | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3L:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-:3 : H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR3: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |