K4T1G164QE-HCE6
Product Overview
Images are for reference only
| Manufacturer Part No | K4T1G164QE-HCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 64MX16 DDR2 |
| Alternate Names | K4T1G164QE-HCE60 |
| K4T1G164QE-HCE6000 | |
| K4T1G164QE-HCE60JR | |
| K4T1G164QE-HCE6: | |
| K4T1G164QE-HCE6T | |
| K4T1G164QE-HCE6T00 | |
| K4T1G164QE-HCE6T000 |
Product Details
| Package | FBGA-84 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T1G164QE-HCE6 | 12,800 | Get Quote | |
| K4T1G164QE-HCE6 | 922 | Get Quote | |
| K4T1G164QE-HCE6 | 44 | 1007+ | Get Quote |
| K4T1G164QE-HCE6 | 5,000 | 21+ | Get Quote |
| K4T1G164QE-HCE6 | 20,000 | 09+ | Get Quote |
| K4T1G164QE-HCE6 | 4 | DC09 | Get Quote |
| K4T1G164QE-HCE6 | 4 | 9 | Get Quote |
| K4T1G164QE-HCE6 | 1,280 | 10+ | Get Quote |
| K4T1G164QE-HCE6 | 294 | 2011 | Get Quote |
| K4T1G164QE-HCE6 | 12,500 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| MT47H64M16HW-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW-3:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW-3E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW-3H-TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16HW/HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16JM-3 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16JM-37E ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| MT47H64M16JM-37E:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |