K4T1G164QE/QQ-HCE6

Product Overview

IC Picture

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Manufacturer Part No K4T1G164QE/QQ-HCE6
Brand SAMSUNG
Item DDR2 SDRAM
Part No 64MX16 DDR2
Alternate Names K4T1G164QE/QQ-HCE6T

Product Details

Package FBGA-84
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 667 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 6th Generation

Available Offers

Description Qty Datecode
K4T1G164QE/QQ-HCE6 10,000 2010 Get Quote
K4T1G164QE/QQ-HCE6 10,000 Get Quote
K4T1G164QE/QQ-HCE6 0 Get Quote
K4T1G164QE/QQ-HCE6T 30,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
MT47H64M16HR-3I FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR-3L FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR-3L:E FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR-:3 : H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR37 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR3: FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR3:G(:H) FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HR3L:H(:E) FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HW 3 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
MT47H64M16HW-3 FBGA-84 1.8 V 667 MBPS 0 C~+85 C