Images are for reference only
Manufacturer Part No | K4T1G164QE/QQ-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 64MX16 DDR2 |
Alternate Names | K4T1G164QE/QQ-HCE6T |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT47H64M16HW-37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3: H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |