K4T1G164QQ-HCE6
Product Overview
Images are for reference only
| Manufacturer Part No | K4T1G164QQ-HCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 64MX16 DDR2 |
| Alternate Names | K4T1G164QQ-HCE60 |
| K4T1G164QQ-HCE600 | |
| K4T1G164QQ-HCE6000 | |
| K4T1G164QQ-HCE60JR | |
| K4T1G164QQ-HCE6T | |
| K4T1G164QQ-HCE6T00 | |
| K4T1G164QQ-HCE6T000 |
Product Details
| Package | FBGA-84 |
| Outpack | TRAY |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | 1280 |
| Std. Carton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 17th Generation |
| Power | Normal Power |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T1G164QQ-HCE6 | 178 | Get Quote | |
| K4T1G164QQ-HCE600 | 2,000 | 10 | Get Quote |
| K4T1G164QQ-HCE6 | 960 | 11 | Get Quote |
| K4T1G164QQ-HCE6 | 1,940 | 10+ | Get Quote |
| K4T1G164QQ-HCE6 | 178 | Get Quote | |
| K4T1G164QQ-HCE6 | 1,120 | Get Quote | |
| K4T1G164QQ-HCE6000 | 10 | DC09 | Get Quote |
| K4T1G164QQ-HCE6 | 5,000 | Get Quote | |
| K4T1G164QQ-HCE6 | 2,000 | Get Quote | |
| K4T1G164QQ-HCE6 | 1,120 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |