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| Manufacturer Part No | K4T2G084QA-HLE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 256MX8 DDR2 |
| Package | FBGA-68 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 256M |
| Bit Organization | x8 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Low Power |
| Generation | 2nd Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T2G084QA-HLE6 | 2,000 | 2009+ | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| K4T2G084QA-HCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QA-JCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QA-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QAHYE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QM-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |