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Manufacturer Part No | K4T2G084QAHYE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 256MX8 DDR2 |
Package | FBGA-68 |
Outpack | |
RoHS | Leaded |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 256M |
Bit Organization | x8 |
Density | 2G |
Internal Banks | 8 Banks |
Generation | 2nd Generation |
Power | Low VDD(1.35V) |
Description | Qty | Datecode | |
---|---|---|---|
K4T2G084QAHYE6 | 4,000 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4T2G084QA-HCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T2G084QA-HLE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T2G084QA-JCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T2G084QA-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T2G084QM-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |