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| 制造商IC编号 | K4M56163PI-BG60 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | SDRAM MOBILE |
| IC代码 | 16MX16 SD |
| 脚位/封装 | FBGA |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -25 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR & PASR & DS |
| Generation | 10th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4M56163PF-BG60 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PG-BG60 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG60 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG60 PER | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG6000 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG60000 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG600JR | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-BG600JR PER | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |
| K4M56163PN-DG60 | FBGA | 1.8 V | 166 MHZ | -25 C~+85 C |