圖片僅供參考
製造商IC編號 | K4AAG165WB-BCWE |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR4 SDRAM |
IC代碼 | 1GX16 DDR4 |
脚位/封装 | FBGA-96 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.2V |
溫度規格 | 0 C~+85 C |
速度 | 3200 MBPS |
標準包裝數量 | 1120 |
標準外箱 | |
Number Of Words | 1G |
Bit Organization | x16 |
Density | 16Gb |
Internal Banks | 16 Banks |
Generation | 3rd Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4AAG165WB-BCWE | 680 | 21+ | 索取報價 |
K4AAG165WB-BCWE | 15,360 | 23+ | 索取報價 |
K4AAG165WB-BCWE | 20,000 | 索取報價 | |
K4AAG165WB-BCWE | 50,000 | 索取報價 | |
K4AAG165WB-BCWE | 50,000 | 23+ | 索取報價 |
K4AAG165WB-BCWE | 100,000 | 22+ | 索取報價 |
K4AAG165WB-BCWE | 100,000 | 索取報價 | |
K4AAG165WB-BCWE | 20,000 | 2022+ | 索取報價 |
K4AAG165WB-BCWE | 946 | 2021+ | 索取報價 |
K4AAG165WB-BCWE | 800 | 21+ | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
H5ANAG6NCJR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
H5ANAG6NCJR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
H5ANAG6NCMR-WMC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
H5ANAG6NCMR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
H5ANAG6NDMR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
H5ANAG6NDMR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
K4AAG165WA-BCWE | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
K4AAG165WA-BCWE0 | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
K4AAG165WA-BCWE000 | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |
K4AAG165WA-BCWE00P | FBGA-96 | 1.2V | 3200 MBPS | 0 C~+85 C |