圖片僅供參考
| 製造商IC編號 | K4B4G1646E-BMMA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 256MX16 DDR3L |
| 共通IC編號 | K4B4G1646E-BMMA0 |
| K4B4G1646E-BMMA00 | |
| K4B4G1646E-BMMA000 | |
| K4B4G1646E-BMMA0CV | |
| K4B4G1646E-BMMA0EC | |
| K4B4G1646E-BMMAT | |
| K4B4G1646E-BMMAT00 | |
| K4B4G1646E-BMMATCV | |
| K4B4G1646E-BMMATEC |
| 脚位/封装 | FBGA-96 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | -40 C~+95 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | 1120 |
| 標準外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 6th Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4B4G1646E-BMMA | 8,814 | 24/25+ | 索取報價 |
| K4B4G1646E-BMMA | 9,600 | 2025+ | 索取報價 |
| K4B4G1646E-BMMA | 11,200 | 索取報價 | |
| K4B4G1646E-BMMA | 0 | DC23+ | 索取報價 |
| K4B4G1646E-BMMA | 10,240 | DC2340+ | 索取報價 |
| K4B4G1646E-BMMA | 100,000+ | DC23+ | 索取報價 |
| K4B4G1646E-BMMA | 3,300 | 25 | 索取報價 |
| K4B4G1646E-BMMA | 15,000 | 索取報價 | |
| K4B4G1646E-BMMA | 2,849 | 21 | 索取報價 |
| K4B4G1646E-BMMA | 9,134 | 21+22+ | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| MT41K256M16TW-107 AIT:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+95 C |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5TC4G63CFR-RDI | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| H5TC4G63EFR-RDI | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| H5TC4G63EFR-RDIR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| HTH5TC4G63EFR-RDANNN-JD7 | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| IM4G16D3FDB-107I | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| IS43TR16256AL-107MBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
| IS43TR16256BL-107MBLI-BM | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
| IS43TR16256BL-107MBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
| IS43TR16256DL-107MBLI | BGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| K4B4G1646D-BMMA | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |