H9HCNNNBPUMLHR-NME

Product Overview

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Manufacturer Part No H9HCNNNBPUMLHR-NME
Brand SK HYNIX
Item LPDDR4 SDRAM
Part No 512MX32 LPDDR4

Product Details

Package FBGA-200
Outpack
RoHS RoHS
Voltage 1.1 V
Temperature -25 C~+85 C
Speed 3733 MBPS
Std. Pack Qty
Std. Carton
Generation 1st
Package Material Lead & Halogen Free
Hynix Memory H
Product Mode LPDDR4 Only
Dram Voltage 1.1V/1.1V,LPDDR4
Nvm Option None
Dram Density 16Gb, QDP, 2Ch, 2CS
Nvm Speed none

Available Offers

Description Qty Datecode
H9HCNNNBPUMLHR-NME 12,000 Get Quote
H9HCNNNBPUMLHR-NME 10,080 2020+ Get Quote
H9HCNNNBPUMLHR-NME 0 Get Quote
H9HCNNNBPUMLHR-NME 7,500 20+ Get Quote
H9HCNNNBPUMLHR-NME 10,080 DC2020+ Get Quote
H9HCNNNBPUMLHR-NME 10,000 Get Quote
H9HCNNNBPUMLHR-NME 135 18+ Get Quote
H9HCNNNBPUMLHR-NME 9,600 Get Quote
H9HCNNNBPUMLHR-NME 4,000 Get Quote
H9HCNNNBPUMLHR-NME 4,800 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H9HCNNNBPUMLHR-NMER FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-GGCJ000 FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCJ FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCJ000 FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCJ0JP FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCJT FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCJT00 FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
K4F6E3S4HM-MGCL FBGA-200 1.1 V 3733 MBPS -25 C~+85 C
MT53E512M32D2NP-053RSWT:A WFBGA-200 1.1 V 3733 MBPS -25 C~+85 C
MT53E512M32D2NP-053RSWT:G WFBGA-200 1.1 V 3733 MBPS -25 C~+85 C