K4A4G165WE-BIWE

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4A4G165WE-BIWE
Brand SAMSUNG
Item DDR4 SDRAM
Part No 256MX16 DDR4
Alternate Names K4A4G165WE-BIWE000
K4A4G165WE-BIWE0CV
K4A4G165WE-BIWETCV

Product Details

Package FBGA-96
Outpack TRAY
RoHS RoHS
Voltage 1.2V
Temperature -40 C~+85 C
Speed 3200 MBPS
Std. Pack Qty 1120
Std. Carton
Number Of Words 256M
Bit Organization x16
Density 4Gb
Internal Banks 16 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4A4G165WE-BIWE 11,200 DC22+23+ Get Quote
K4A4G165WE-BIWETCV 4,930 Get Quote
K4A4G165WE-BIWE 11,200 DC22+ Get Quote
K4A4G165WE-BIWE 20,480 Get Quote
K4A4G165WE-BIWE 871 Get Quote
K4A4G165WE-BIWETCV 16,000 Get Quote
K4A4G165WE-BIWE 0 Get Quote
K4A4G165WE-BIWETCV 24,000 Get Quote
K4A4G165WE-BIWE 11,200 Get Quote
K4A4G165WE-BIWE 30,000 Get Quote

Cross Reference

Description Package Voltage Speed Temperature
MT40A256M16GE 083E:B FBGA-96 1.2V 2400 MBPS 0 C~+70 C

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4A4G165WE-BIWETCT FBGA-96 1.2 V 3200 MBPS -40 C~+85 C
K4A4G165WE-BIWETEC FBGA-96 1.2V 3200 MBPS -40 C~+85 C