K4ZAF325BM-HC18

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4ZAF325BM-HC18
Brand SAMSUNG
Item GDDR6 SDRAM
Part No 512MX32 GDDR6

Product Details

Package FBGA-180
Outpack
RoHS RoHS
Voltage 1.35V
Temperature 0 C~+95 C
Speed 14 GB/S
Std. Pack Qty
Std. Carton
Bit Organization x32
Internal Banks 16 Banks
Generation 1st Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4ZAF325BM-HC18 10,000 22+ Get Quote
K4ZAF325BM-HC18 2,240 22+ Get Quote
K4ZAF325BM-HC18 10,000 21+ Get Quote
K4ZAF325BM-HC18 10,000 Get Quote
K4ZAF325BM-HC18 6,720 Get Quote
K4ZAF325BM-HC18 6,720 21+ Get Quote
K4ZAF325BM-HC18 10,000 20+ Get Quote
K4ZAF325BM-HC18 30,000 Get Quote
K4ZAF325BM-HC18 10,080 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H56G42AS2DX014N FBGA-180 1.35V 14 GB/S 0 C~+95 C
H56G42AS6DX014 FBGA-180 1.35V 14 GB/S 0 C~+95 C
H56G42AS6DX014N FBGA-180 1.35V 14 GB/S 0 C~+95 C
K4ZAF325BM-HC14 FBGA-180 1.35V 14 GB/S 0 C~+95 C
K4ZAF325BM-HC14000 FBGA-180 1.35V 14 GB/S 0 C~+95 C
MT61K512M32KPA-14:B FBGA-180 1.35V 14 GB/S 0 C~+95 C
MT61K512M32KPA-14C ES:B FBGA-180 1.35V 14 GB/S 0 C~+95 C