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| Manufacturer Part No | K4ZAF325BM-HC14 |
| Brand | SAMSUNG |
| Item | GDDR6 SDRAM |
| Part No | 512MX32 GDDR6 |
| Alternate Names | K4ZAF325BM-HC14000 |
| Package | FBGA-180 |
| Outpack | TRAY |
| RoHS | RoHS |
| Voltage | 1.35V |
| Temperature | 0 C~+95 C |
| Speed | 14 GB/S |
| Std. Pack Qty | 1120 |
| Std. Carton | |
| Bit Organization | x32 |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 1st Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4ZAF325BM-HC14 | 2,000 | 21 | Get Quote |
| K4ZAF325BM-HC14 | 2,000 | 21+ | Get Quote |
| K4ZAF325BM-HC14 | 25 | Get Quote | |
| K4ZAF325BM-HC14 | 50,000 | 24+ | Get Quote |
| K4ZAF325BM-HC14 | 200 | 2143+ | Get Quote |
| K4ZAF325BM-HC14 | 2,000 | 22+ | Get Quote |
| K4ZAF325BM-HC14 | 5,000 | 22+ | Get Quote |
| K4ZAF325BM-HC14 | 2,000 | 22 | Get Quote |
| K4ZAF325BM-HC14 | 1,000 | 21 | Get Quote |
| K4ZAF325BM-HC14 | 10,000 | 22 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| H56G42AS2DX014N | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| H56G42AS2DX014 | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
| K4ZAF325BM-HC18 | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
| MT61K512M32KPA-14:B | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |
| MT61K512M32KPA-14C ES:B | FBGA-180 | 1.35V | 14 GB/S | 0 C~+95 C |