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制造商IC编号 | K4B4G1646E-BMMA |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 256MX16 DDR3L |
共通IC编号 | K4B4G1646E-BMMA00 |
K4B4G1646E-BMMA000 | |
K4B4G1646E-BMMA0CV | |
K4B4G1646E-BMMAT | |
K4B4G1646E-BMMATCV |
脚位/封装 | FBGA-96 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | -40 C~+95 C |
速度 | 1866 MBPS |
标准包装数量 | 1120 |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G1646E-BMMA | 15,680 | 22+ | 索取报价 |
K4B4G1646E-BMMATCV | 3,000 | 索取报价 | |
K4B4G1646E-BMMATCV | 4,000 | 索取报价 | |
K4B4G1646E-BMMA | 25,000 | 索取报价 | |
K4B4G1646E-BMMA | 11,200 | 21+ | 索取报价 |
K4B4G1646E-BMMA | 30,000 | DC22+ | 索取报价 |
K4B4G1646E-BMMA | 30,000 | DC2021+ | 索取报价 |
K4B4G1646E-BMMA | 30,000 | 2021+ | 索取报价 |
K4B4G1646E-BMMA0CV | 9,600 | 21+ | 索取报价 |
K4B4G1646E-BMMA0CV | 528 | 2021+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT41K256M16TW-107 AIT:P | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5TC4G63CFR-RDI | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
H5TC4G63EFR-RDI | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
H5TC4G63EFR-RDIR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
IS43TR16256AL-107MBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-107MBLI-BM | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-107MBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
K4B4G1646D-BMMA | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
K4B4G1646E-BMMA0CV SAM | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT ES:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |