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Manufacturer Part No | K4A4G165WE-BIWETCT |
Brand | SAMSUNG |
Item | DDR4 SDRAM |
Part No | 256MX16 DDR4 |
Package | FBGA-96 |
Outpack | TAPE ON REEL |
RoHS | RoHS |
Voltage | 1.2 V |
Temperature | -40 C~+85 C |
Speed | 3200 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4Gb |
Internal Banks | 16 Banks |
Generation | 6th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4A4G165WE-BIWETCT | 100,000+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4A4G165WE-BIWE | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
K4A4G165WE-BIWE000 | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
K4A4G165WE-BIWE0CV | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
K4A4G165WE-BIWETCV | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
K4A4G165WE-BIWETEC | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |